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参数资料
| 型号： | ATF-541M4-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 |
| 文件页数： | 10/16页 |
| 文件大小： | 166K |
| 代理商： | ATF-541M4-BLK |
3
ATF-541M4 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 3V, Ids = 60 mA
V
0.4
0.58
0.75
Vth
Threshold Voltage
Vds = 3V, Ids = 4 mA
V
0.18
0.36
0.52
Idss
Saturated Drain Current
Vds = 3V, Vgs = 0V
A
—
0.28
5
Gm
Transconductance
Vds = 3V, gm =
Idss/Vgs;
mmho
230
398
560
Vgs = 0.75 – 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -3V
A
——
200
NF
Noise Figure[1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
dB
—
0.5
0.9
Vds = 4V, Ids = 60 mA
dB
—
0.5
—
Gain
Gain [1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
dB
15.5
17.5
18.5
Vds = 4V, Ids = 60 mA
dB
—
18.1
—
OIP3
Output 3rd Order
f = 2 GHz
Vds = 3V, Ids = 60 mA
dBm
33
35.8
—
Intercept Point[1]
Vds = 4V, Ids = 60 mA
dBm
—
35.9
—
P1dB
1dB Compressed
f = 2 GHz
Vds = 3V, Ids = 60 mA
dBm
—
21.4
—
Output Power [1]
Vds = 4V, Ids = 60 mA
dBm
—
22.1
—
Notes:
1. Measurements obtained using production test board described in Figure 5.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.11
Γ_ang = 141°
(0.5 dB loss)
Output
Matching Circuit
Γ_mag = 0.314
Γ_ang = -167°
(0.5 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Fmin
Minimum Noise Figure [2]
f = 900 GHz
Vds = 3V, Ids = 60 mA
dB
—
0.16
—
f = 2 GHz
Vds = 3V, Ids = 60 mA
dB
—
0.46
—
f = 3.9 GHz
Vds = 3V, Ids = 60 mA
dB
—
0.8
—
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
dB
—
1.17
—
Ga
Associated Gain [2]
f = 900 GHz
Vds = 3V, Ids = 60 mA
dB
—
22.4
—
f = 2 GHz
Vds = 3V, Ids = 60 mA
dB
—
18.7
—
f = 3.9 GHz
Vds = 3V, Ids = 60 mA
dB
—
14.5
—
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
dB
—
11.9
—
OIP3
Output 3rd Order
f = 900 GHz
Vds = 3V, Ids = 60 mA
dBm
—
35
—
Intercept Point[3]
Vds = 4V, Ids = 60 mA
dBm
—
35.1
—
f = 3.9 GHz
Vds = 3V, Ids = 60 mA
dB
—
36.6
—
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
dB
—
37.6
—
P1dB
1dB Compressed
f = 900 GHz
Vds = 3V, Ids = 60 mA
dBm
—
19.5
—
Output Power [3]
Vds = 4V, Ids = 60 mA
dBm
—
20.8
—
f = 3.9 GHz
Vds = 3V, Ids = 60 mA
dB
—
20.4
—
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
dB
—
19.4
—
Notes:
2. Fmin and associated gain at minimum noise figure (Ga) values are based on a set of 16 noise figure measurements made at 16 different impedances
using an ATN NP5 test system. From these measurements a true Fmin and Ga is calculated. Refer to the noise parameter application section for more
information.
3. P
1dB and OIP3 measurements made in an InterContinental Microwave (ICM) test fixture with double stub tuners and bias tees. The input was tuned for
minimum noise figure and the output was tuned for maximum OIP3.
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| ATF-541M4-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-541M4-BLK | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-541M4-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-541M4-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF55143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
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