参数资料
型号: ATF16V8B-10JC
厂商: Atmel
文件页数: 9/26页
文件大小: 0K
描述: IC PLD 8CELL 10NS 20PLCC
标准包装: 48
系列: 16V8
可编程类型: EE PLD
宏单元数: 8
输入电压: 5V
速度: 10ns
安装类型: 表面贴装
封装/外壳: 20-LCC(J 形引线)
供应商设备封装: 20-PLCC
包装: 管件
17
7707F–AVR–11/10
AT90USB82/162
Figure 5-1.
Program Memory Map
5.2
SRAM Data Memory
Figure 5-2 shows how the AT90USB82/162 SRAM Memory is organized.
The AT90USB82/162 is a complex microcontroller with more peripheral units than can be sup-
ported within the 64 location reserved in the Opcode for the IN and OUT instructions. For the
Extended I/O space from $060 - $0FF in SRAM, only the ST/STS/STD and LD/LDS/LDD instruc-
tions can be used.
The first 768 Data Memory locations address the Register File, the I/O Memory, Extended I/O
Memory, and the internal data SRAM. The first 32 locations address the Register file, the next
64 location the standard I/O Memory, then 160 locations of Extended I/O memory, and the 512
locations of internal data SRAM.The five different addressing modes for the data memory cover:
Direct, Indirect with Displacement, Indirect, Indirect with Pre-decrement, and Indirect with Post-
increment. In the Register file, registers R26 to R31 feature the indirect addressing pointer
registers.
The direct addressing reaches the entire data space.
The Indirect with Displacement mode reaches 63 address locations from the base address given
by the Y- or Z-register.
When using register indirect addressing modes with automatic pre-decrement and post-incre-
ment, the address registers X, Y, and Z are decremented or incremented.
0x00000
0x1FFF (8KBytes)
0x3FFF (16KBytes)
Program Memory
Application Flash Section
Boot Flash Section
相关PDF资料
PDF描述
ATF16LV8C-10SC IC PLD EE 15NS 20-SOIC
1-84952-4 CONN FPC 14POS 1.00MM R/A SMD
AMC65DREF-S734 CONN EDGECARD 130PS .100 EYELET
ABC65DRAI-S734 CONN EDGECARD 130PS .100 R/A PCB
2-84952-4 CONN FPC 24POS 1MM RT ANG SMD
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