参数资料
| 型号： | ATF16V8B-10PC |
| 厂商： | Atmel |
| 文件页数： | 11/26页 |
| 文件大小： | 0K |
| 描述： | IC PLD 8CELL 10NS 20DIP |
| 标准包装： | 18 |
| 系列： | 16V8 |
| 可编程类型： | EE PLD |
| 宏单元数： | 8 |
| 输入电压： | 5V |
| 速度： | 10ns |
| 安装类型： | 通孔 |
| 封装/外壳： | 20-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 20-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 610 (CN2011-ZH PDF) |
19
7707F–AVR–11/10
AT90USB82/162
For a detailed description of SPI, debugWIRE and Parallel data downloading to the EEPROM,
5.3.1
EEPROM Read/Write Access
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in Table 5-2. A self-timing function, however,
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
CC is likely to rise or fall slowly on power-up/down. This causes the device for some
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
See “Preventing EEPROM Corruption” on page 23. for details on how to avoid problems in these
situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
5.3.2
The EEPROM Address Register – EEARH and EEARL
Bits 15..12 – Res: Reserved Bits
These bits are reserved bits in the AT90USB82/162 and will always read as zero.
Bits 11..0 – EEAR8..0: EEPROM Address
The EEPROM Address Registers – EEARH and EEARL specify the EEPROM address in the
512 bytes EEPROM space. The EEPROM data bytes are addressed linearly between 0 and
512. The initial value of EEAR is undefined. A proper value must be written before the EEPROM
may be accessed.
5.3.3
The EEPROM Data Register – EEDR
Bits 7..0 – EEDR7.0: EEPROM Data
For the EEPROM write operation, the EEDR Register contains the data to be written to the
EEPROM in the address given by the EEAR Register. For the EEPROM read operation, the
EEDR contains the data read out from the EEPROM at the address given by EEAR.
Bit
151413
1211
10
9
8
–
EEAR11
EEAR10
EEAR9
EEAR8
EEARH
EEAR7
EEAR6
EEAR5
EEAR4
EEAR3
EEAR2
EEAR1
EEAR0
EEARL
76
54
3
2
1
0
Read/Write
R
R/W
Initial Value
0
X
XX
X
Bit
765432
1
0
MSB
LSB
EEDR
Read/Write
R/W
Initial Value
000000
0
相关PDF资料 |
PDF描述 |
|---|---|
| ATF16V8B-10JC | IC PLD 8CELL 10NS 20PLCC |
| ATF16LV8C-10SC | IC PLD EE 15NS 20-SOIC |
| 1-84952-4 | CONN FPC 14POS 1.00MM R/A SMD |
| AMC65DREF-S734 | CONN EDGECARD 130PS .100 EYELET |
| ABC65DRAI-S734 | CONN EDGECARD 130PS .100 R/A PCB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF16V8B-10PI | 功能描述:EEPLD - 电子擦除可编程逻辑设备 10NS 250 GTE EPLD 5V GRN 10NS IND TEMP RoHS:否 制造商:Atmel 逻辑系列:ATF16V8BQL 最大工作频率:62 MHz 可编程输入/输出端数量:20 电源电流:20 mA 延迟时间:15 ns 每个宏指令的积项数:8 电源电压-最大:5.5 V 电源电压-最小:4.5 V 大电池数量:8 最小工作温度:- 40 C 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:PDIP-20 |
| ATF16V8B-10SC | 功能描述:EEPLD - 电子擦除可编程逻辑设备 10NS250 GATES 20 PIN5V - 10NS RoHS:否 制造商:Atmel 逻辑系列:ATF16V8BQL 最大工作频率:62 MHz 可编程输入/输出端数量:20 电源电流:20 mA 延迟时间:15 ns 每个宏指令的积项数:8 电源电压-最大:5.5 V 电源电压-最小:4.5 V 大电池数量:8 最小工作温度:- 40 C 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:PDIP-20 |
| ATF16V8B-10SI | 功能描述:EEPLD - 电子擦除可编程逻辑设备 10NS 250 GATES EPLD 10NS IND TEMP RoHS:否 制造商:Atmel 逻辑系列:ATF16V8BQL 最大工作频率:62 MHz 可编程输入/输出端数量:20 电源电流:20 mA 延迟时间:15 ns 每个宏指令的积项数:8 电源电压-最大:5.5 V 电源电压-最小:4.5 V 大电池数量:8 最小工作温度:- 40 C 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:PDIP-20 |
| ATF16V8B-10XC | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Highperformance EE PLD |
| ATF16V8B-10XI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Electrically-Erasable PLD |
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