参数资料
| 型号： | ATF16V8B-10PC |
| 厂商： | Atmel |
| 文件页数： | 16/26页 |
| 文件大小： | 0K |
| 描述： | IC PLD 8CELL 10NS 20DIP |
| 标准包装： | 18 |
| 系列： | 16V8 |
| 可编程类型： | EE PLD |
| 宏单元数： | 8 |
| 输入电压： | 5V |
| 速度： | 10ns |
| 安装类型： | 通孔 |
| 封装/外壳： | 20-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 20-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 610 (CN2011-ZH PDF) |
23
7707F–AVR–11/10
AT90USB82/162
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
Note:
5.3.5
Preventing EEPROM Corruption
During periods of low V
CC, the EEPROM data can be corrupted because the supply voltage is
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
CC reset Protection circuit can
Assembly Code Example
EEPROM_read:
; Wait for completion of previous write
sbic
EECR,EEPE
rjmp
EEPROM_read
; Set up address (r18:r17) in address register
out
EEARH, r18
out
EEARL, r17
; Start eeprom read by writing EERE
sbi
EECR,EERE
; Read data from Data Register
in
r16,EEDR
ret
C Code Example
unsigned char
EEPROM_read(unsigned int uiAddress)
{
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
;
/* Set up address register */
EEAR = uiAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from Data Register */
return EEDR;
}
相关PDF资料 |
PDF描述 |
|---|---|
| ATF16V8B-10JC | IC PLD 8CELL 10NS 20PLCC |
| ATF16LV8C-10SC | IC PLD EE 15NS 20-SOIC |
| 1-84952-4 | CONN FPC 14POS 1.00MM R/A SMD |
| AMC65DREF-S734 | CONN EDGECARD 130PS .100 EYELET |
| ABC65DRAI-S734 | CONN EDGECARD 130PS .100 R/A PCB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF16V8B-10PI | 功能描述:EEPLD - 电子擦除可编程逻辑设备 10NS 250 GTE EPLD 5V GRN 10NS IND TEMP RoHS:否 制造商:Atmel 逻辑系列:ATF16V8BQL 最大工作频率:62 MHz 可编程输入/输出端数量:20 电源电流:20 mA 延迟时间:15 ns 每个宏指令的积项数:8 电源电压-最大:5.5 V 电源电压-最小:4.5 V 大电池数量:8 最小工作温度:- 40 C 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:PDIP-20 |
| ATF16V8B-10SC | 功能描述:EEPLD - 电子擦除可编程逻辑设备 10NS250 GATES 20 PIN5V - 10NS RoHS:否 制造商:Atmel 逻辑系列:ATF16V8BQL 最大工作频率:62 MHz 可编程输入/输出端数量:20 电源电流:20 mA 延迟时间:15 ns 每个宏指令的积项数:8 电源电压-最大:5.5 V 电源电压-最小:4.5 V 大电池数量:8 最小工作温度:- 40 C 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:PDIP-20 |
| ATF16V8B-10SI | 功能描述:EEPLD - 电子擦除可编程逻辑设备 10NS 250 GATES EPLD 10NS IND TEMP RoHS:否 制造商:Atmel 逻辑系列:ATF16V8BQL 最大工作频率:62 MHz 可编程输入/输出端数量:20 电源电流:20 mA 延迟时间:15 ns 每个宏指令的积项数:8 电源电压-最大:5.5 V 电源电压-最小:4.5 V 大电池数量:8 最小工作温度:- 40 C 最大工作温度:+ 85 C 安装风格:Through Hole 封装 / 箱体:PDIP-20 |
| ATF16V8B-10XC | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Highperformance EE PLD |
| ATF16V8B-10XI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Electrically-Erasable PLD |
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