参数资料
型号: ATMEGA1284P-AU
厂商: Atmel
文件页数: 79/160页
文件大小: 0K
描述: MCU AVR 128K ISP FLASH 44-TQFP
产品培训模块: MCU Product Line Introduction
megaAVR Introduction
标准包装: 160
系列: AVR® ATmega
核心处理器: AVR
芯体尺寸: 8-位
速度: 20MHz
连通性: I²C,SPI,UART/USART
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 32
程序存储器容量: 128KB(64K x 16)
程序存储器类型: 闪存
EEPROM 大小: 4K x 8
RAM 容量: 16K x 8
电压 - 电源 (Vcc/Vdd): 1.8 V ~ 5.5 V
数据转换器: A/D 8x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 44-TQFP
包装: 托盘
产品目录页面: 614 (CN2011-ZH PDF)
配用: ATSTK600-RC31-ND - STK600 ROUTING CARD AVR
ATSTK600-TQFP44-ND - STK600 SOCKET/ADAPTER 44-TQFP
ATSTK600-ND - DEV KIT FOR AVR/AVR32
25
8272E–AVR–04/2013
ATmega164A/PA/324A/PA/644A/PA/1284/P
operations. The Programming times for the different modes are shown in Table 8-1 on page 25.
While EEPE is set, any write to EEPMn will be ignored. During reset, the EEPMn bits will be
reset to 0b00 unless the EEPROM is busy programming.
Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing EERIE to one enables the EEPROM Ready Interrupt if the I bit in SREG is set. Writing
EERIE to zero disables the interrupt. The EEPROM Ready interrupt generates a constant inter-
rupt when EEPE is cleared.
Bit 2 – EEMPE: EEPROM Master Programming Enable
The EEMPE bit determines whether setting EEPE to one causes the EEPROM to be written.
When EEMPE is set, setting EEPE within four clock cycles will write data to the EEPROM at the
selected address If EEMPE is zero, setting EEPE will have no effect. When EEMPE has been
written to one by software, hardware clears the bit to zero after four clock cycles. See the
description of the EEPE bit for an EEPROM write procedure.
Bit 1 – EEPE: EEPROM Programming Enable
The EEPROM Write Enable Signal EEPE is the write strobe to the EEPROM. When address
and data are correctly set up, the EEPE bit must be written to one to write the value into the
EEPROM. The EEMPE bit must be written to one before a logical one is written to EEPE, other-
wise no EEPROM write takes place. The following procedure should be followed when writing
the EEPROM (the order of steps 3 and 4 is not essential):
1.
Wait until EEPE becomes zero.
2.
Wait until SPMEN in SPMCSR becomes zero.
3.
Write new EEPROM address to EEAR (optional).
4.
Write new EEPROM data to EEDR (optional).
5.
Write a logical one to the EEMPE bit while writing a zero to EEPE in EECR.
6.
Within four clock cycles after setting EEMPE, write a logical one to EEPE.
The EEPROM can not be programmed during a CPU write to the Flash memory. The software
must check that the Flash programming is completed before initiating a new EEPROM write.
Step 2 is only relevant if the software contains a Boot Loader allowing the CPU to program the
Flash. If the Flash is never being updated by the CPU, step 2 can be omitted. See ”Memory pro-
gramming” on page 298 for details about Boot programming.
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared
during all the steps to avoid these problems.
Table 8-1.
EEPROM Mode Bits.
EEPM1
EEPM0
Programming
time
Operation
0
3.4ms
Erase and Write in one operation (Atomic Operation)
0
1
1.8ms
Erase Only
1
0
1.8ms
Write Only
1
Reserved for future use
相关PDF资料
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VE-JV1-IY-F4 CONVERTER MOD DC/DC 12V 50W
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