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参数资料
| 型号： | ATP203 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE, ATPAK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 256K |
| 代理商： | ATP203 |
ATP203
No. A1318-1/4
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
Low ON-resistance.
Large current.
Slim package.
4.5V drive.
Halogen free compliance.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
75
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
225
A
Allowable Power Dissipation
PD
Tc=25°C50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
52
mJ
Avalanche Current *2
IAV
38
A
Note :
*1 VDD=10V, L=50μH, IAV=38A
*2 L≤50μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Marking : ATP203
Continued on next page.
Ordering number : ENA1318
91708PA TI IM TC-00001570
SANYO Semiconductors
DATA SHEET
ATP203
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network
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PDF描述 |
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| ATP204 | 100 A, 30 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATP203_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP203-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ATP204 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP204_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP204SM | 功能描述:CRYSTAL 20.480 MHZ 20PF SMD RoHS:否 类别:晶体和振荡器 >> 晶体 系列:ATP-SM 标准包装:1 系列:ABLS2 类型:MHz 晶体 频率:3.579545MHz 频率稳定性:±30ppm 频率公差:±30ppm 负载电容:18pF ESR（等效串联电阻）:180 欧姆 工作模式:基谐 工作温度:-40°C ~ 85°C 额定值:- 安装类型:表面贴装 封装/外壳:HC49/US 尺寸/尺寸:0.449" L x 0.185" W（11.40mm x 4.70mm） 高度:0.130"（3.30mm） 包装:剪切带 (CT) 产品目录页面:1683 (CN2011-ZH PDF) 其它名称:535-9855-1 |
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