参数资料
型号: ATP203
元件分类: JFETs
英文描述: 75 A, 30 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE, ATPAK-3
文件页数: 4/4页
文件大小: 256K
代理商: ATP203
ATP203
No. A1318-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of September, 2008. Specications and information herein are subject
to change without notice.
Note on usage : Since the ATP203 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
A S O
VGS -- Qg
PD -- Tc
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
--
W
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
Ambient Temperature, Ta --
°C
0
IT14010
0
20
40
60
10
20
50
30
40
80
100
120
60
140
160
100
2
3
5
7
2
3
5
7
2
3
5
7
5
3
10
0.1
1.0
23
5
2
7
0.1
1.0
2
IT14009
IT14008
0
1
2
3
4
5
6
7
8
45
30
40
20
10
9
10
25
35
15
5
VDS=15V
ID=75A
Operation in this area
is limited by RDS(on).
100
μs
ID=75A
IDP=225A
DC
operation
35
7 10
1ms
10ms
100ms
0
25
50
75
100
125
150
100
80
60
20
40
120
175
IT14011
Tc=25
°C
Single pulse
10
μs
PW
≤10μs
相关PDF资料
PDF描述
ATP204 100 A, 30 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
ATP204 100 A, 30 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
ATP213 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
ATP213 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
ATP218 100 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
ATP203_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP203-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ATP204 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP204_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP204SM 功能描述:CRYSTAL 20.480 MHZ 20PF SMD RoHS:否 类别:晶体和振荡器 >> 晶体 系列:ATP-SM 标准包装:1 系列:ABLS2 类型:MHz 晶体 频率:3.579545MHz 频率稳定性:±30ppm 频率公差:±30ppm 负载电容:18pF ESR(等效串联电阻):180 欧姆 工作模式:基谐 工作温度:-40°C ~ 85°C 额定值:- 安装类型:表面贴装 封装/外壳:HC49/US 尺寸/尺寸:0.449" L x 0.185" W(11.40mm x 4.70mm) 高度:0.130"(3.30mm) 包装:剪切带 (CT) 产品目录页面:1683 (CN2011-ZH PDF) 其它名称:535-9855-1