参数资料
型号: ATP404
元件分类: JFETs
英文描述: 95 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE, ATPAK-3
文件页数: 2/4页
文件大小: 271K
代理商: ATP404
ATP404
No. A1405-2/4
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=48A
100
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=48A, VGS=10V
5.5
7.2
RDS(on)2
ID=48A, VGS=4.5V
7.5
10.5
Input Capacitance
Ciss
VDS=20V, f=1MHz
6400
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
490
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
380
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
53
ns
Rise Time
tr
See specied Test Circuit.
640
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
380
ns
Fall Time
tf
See specied Test Circuit.
520
ns
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=95A
120
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=95A
25
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=10V, ID=95A
25
nC
Diode Forward Voltage
VSD
IS=95A, VGS=0V
0.95
1.2
V
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Avalanche Resistance Test Circuit
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.7
0.4
0.55
9.5
7.3
0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4
2.6
4.6
0.4
0.1
2.3
50Ω
10V
0V
≥50Ω
VDD
L
ATP404
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=48A
RL=0.625Ω
VDD=30V
VOUT
ATP404
VIN
10V
0V
VIN
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