参数资料
| 型号： | ATTINY13A-SU |
| 厂商： | Atmel |
| 文件页数： | 35/67页 |
| 文件大小： | 0K |
| 描述： | IC MCU AVR 1K FLASH 20MHZ 8SOIC |
| 产品培训模块： | MCU Product Line Introduction tinyAVR Introduction |
| 标准包装： | 95 |
| 系列： | AVR® ATtiny |
| 核心处理器： | AVR |
| 芯体尺寸： | 8-位 |
| 速度： | 20MHz |
| 外围设备： | 欠压检测/复位，POR，PWM，WDT |
| 输入/输出数： | 6 |
| 程序存储器容量： | 1KB（512 x 16） |
| 程序存储器类型： | 闪存 |
| EEPROM 大小： | 64 x 8 |
| RAM 容量： | 64 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.8 V ~ 5.5 V |
| 数据转换器： | A/D 4x10b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.209"，5.30mm 宽） |
| 包装： | 管件 |
| 产品目录页面： | 612 (CN2011-ZH PDF) |
| 配用： | ATSTK600-DIP40-ND - STK600 SOCKET/ADAPTER 40-PDIP ATAVRDRAGON-ND - KIT DRAGON FLASH MEM AVR ATAVRISP2-ND - PROGRAMMER AVR IN SYSTEM ATJTAGICE2-ND - AVR ON-CHIP D-BUG SYSTEM |
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17
8126F–AVR–05/12
ATtiny13A
5.3.1
EEPROM Read/Write Access
The EEPROM Access Registers are accessible in the I/O space.
The write access times for the EEPROM are given in Table 5-1 on page 21. A self-timing func-
tion, however, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In heavily fil-
tered power supplies, V
CC is likely to rise or fall slowly on Power-up/down. This causes the
device for some period of time to run at a voltage lower than specified as minimum for the clock
frequency used. See “Preventing EEPROM Corruption” on page 19 for details on how to avoid
problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to “Atomic Byte Programming” on page 17 and “Split Byte Programming” on page 17 for
details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
5.3.2
Atomic Byte Programming
Using Atomic Byte Programming is the simplest mode. When writing a byte to the EEPROM, the
user must write the address into the EEARL Register and data into EEDR Register. If the
EEPMn bits are zero, writing EEPE (within four cycles after EEMPE is written) will trigger the
erase/write operation. Both the erase and write cycle are done in one operation and the total
programming time is given in Table 5-1 on page 21. The EEPE bit remains set until the erase
and write operations are completed. While the device is busy with programming, it is not possi-
ble to do any other EEPROM operations.
5.3.3
Split Byte Programming
It is possible to split the erase and write cycle in two different operations. This may be useful if
the system requires short access time for some limited period of time (typically if the power sup-
ply voltage falls). In order to take advantage of this method, it is required that the locations to be
written have been erased before the write operation. But since the erase and write operations
are split, it is possible to do the erase operations when the system allows doing time-critical
operations (typically after Power-up).
5.3.4
Erase
To erase a byte, the address must be written to EEARL. If the EEPMn bits are 0b01, writing the
EEPE (within four cycles after EEMPE is written) will trigger the erase operation only (program-
ming time is given in Table 5-1 on page 21). The EEPE bit remains set until the erase operation
completes. While the device is busy programming, it is not possible to do any other EEPROM
operations.
5.3.5
Write
To write a location, the user must write the address into EEARL and the data into EEDR. If the
EEPMn bits are 0b10, writing the EEPE (within four cycles after EEMPE is written) will trigger
the write operation only (programming time is given in Table 5-1 on page 21). The EEPE bit
remains set until the write operation completes. If the location to be written has not been erased
before write, the data that is stored must be considered as lost. While the device is busy with
programming, it is not possible to do any other EEPROM operations.
相关PDF资料 |
PDF描述 |
|---|---|
| ATTINY13A-PU | IC MCU AVR 1K FLASH 20MHZ 8PDIP |
| ATTINY48-MUR | MCU AVR 4KB FLASH 12MHZ 32QFN |
| ATTINY13A-MU | IC MCU AVR 1K FLASH 20MHZ 20-QFN |
| ATTINY13A-SN | IC MCU AVR 1KB FLASH 20MHZ 8SOIC |
| ATTINY13A-SH | IC MCU AVR 1K FLASH 20MHZ 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATTINY13A-SU/LFCTC3136-01038 | 制造商:Atmel Corporation 功能描述:MCU 8BIT ATTINY RISC 1KB FLASH 2.5V/3.3V/5V 8SOIC EIAJ - Rail/Tube |
| ATTINY13A-SUR | 功能描述:8位微控制器 -MCU AVR 1KB FL 64B EE 64B SRAM 20 MHz IND RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| ATTINY13A-W | 功能描述:8位微控制器 -MCU Microcontroller RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| ATTINY13A-W-11 | 功能描述:8位微控制器 -MCU Microcontroller RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| ATTINY13-D | 功能描述:8位微控制器 -MCU Microcontroller RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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