参数资料
型号: ATTINY43U-SUR
厂商: Atmel
文件页数: 56/158页
文件大小: 0K
描述: MCU AVR 4KB FLASH 8MHZ 20SOIC
产品培训模块: tinyAVR Introduction
标准包装: 1,000
系列: AVR® ATtiny
核心处理器: AVR
芯体尺寸: 8-位
速度: 8MHz
连通性: USI
外围设备: 欠压检测/复位,POR,PWM,温度传感器,WDT
输入/输出数: 16
程序存储器容量: 4KB(2K x 16)
程序存储器类型: 闪存
EEPROM 大小: 64 x 8
RAM 容量: 256 x 8
电压 - 电源 (Vcc/Vdd): 1.8 V ~ 5.5 V
数据转换器: A/D 4x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
包装: 带卷 (TR)
其它名称: ATTINY43U-SUR-ND
149
8048C–AVR–02/12
ATtiny43U
Figure 19-3. Programming the Flash Waveforms
Note:
1. “XX” is don’t care. The letters refer to the programming description above.
I. Repeat B through H until the entire Flash is programmed or until all data has been
programmed.
J. End Page Programming
1.
1. Set XA1, XA0 to “10”. This enables command loading.
2.
Set DATA to “0000 0000”. This is the command for No Operation.
3.
Give CLKI a positive pulse. This loads the command, and the internal write signals are
reset.
19.6.5
Programming the EEPROM
The EEPROM is organized in pages, see Table 19-9 on page 144. When programming the
EEPROM, the program data is latched into a page buffer. This allows one page of data to be
programmed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to “Programming the Flash” on page 147 for details on Command, Address and
Data loading):
1.
A: Load Command “0001 0001”.
2.
G: Load Address High Byte (0x00 - 0xFF).
3.
B: Load Address Low Byte (0x00 - 0xFF).
4.
C: Load Data (0x00 - 0xFF).
5.
E: No action.
K: Repeat 3 through 5 until the entire buffer is filled.
L: Program EEPROM page
1.
Set BS1 to “0”.
2.
Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY
goes low.
3.
Wait until to RDY/BSY goes high before programming the next page (See Figure 19-4
for signal waveforms).
RDY/BSY
WR
OE
RESET +12V
0x10
ADDR. LOW
ADDR. HIGH
DATA
DATA LOW
DATA HIGH
ADDR. LOW
DATA LOW
DATA HIGH
XA1/BS2
XA0
PAGEL/BS1
CLKI
XX
AB
CD
E
B
C
D
E
G
H
F
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