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参数资料
| 型号： | AUIRF1405ZSTRL |
| 元件分类： | JFETs |
| 英文描述： | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 1/14页 |
| 文件大小： | 313K |
| 代理商： | AUIRF1405ZSTRL |
AUIRF1405ZS
AUIRF1405ZL
HEXFET Power MOSFET
07/01/2010
www.irf.com
1
AUTOMOTIVE GRADE
PD - 97486A
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to
Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design
are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine
to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
GD
S
Gate
Drain
Source
TO-262
AUIRF1405ZL
S
D
G
D
D2Pak
AUIRF1405ZS
S
D
G
D
V(BR)DSS
55V
RDS(on) max.
4.9m
ID
150A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.65
°C/W
RθJA
Junction-to-Ambient (PCB Mount, steady state)
i
–––
40
-55 to + 175
300
10 lbf
yin (1.1Nym)
230
1.5
± 20
Max.
150
110
600
420
270
See Fig.12a, 12b, 15, 16
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRF1405ZSTRR | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1405ZS | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1405ZL | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF1405 | 75 A, 55 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRF2607ZTRL | 42 A, 75 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF1405ZSTRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF2607ZTRL | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET? Power MOSFET |
| AUIRF2607ZTRR | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET? Power MOSFET |
| AUIRF2804 | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF2804L | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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