- 您现在的位置：买卖IC网 > PDF目录42905 > AUIRF1405ZSTRR 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF资料下载
参数资料
| 型号： | AUIRF1405ZSTRR |
| 元件分类： | JFETs |
| 英文描述： | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 10/14页 |
| 文件大小： | 313K |
| 代理商： | AUIRF1405ZSTRR |
AUIRF1405ZS/L
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,C
ap
ac
ita
nc
e(
pF
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20406080
100
120
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 44V
VDS= 28V
ID= 75A
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
Tc = 25°C
Tj = 175°C
Single Pulse
nce
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRF1405ZS | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1405ZL | 150 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF1405 | 75 A, 55 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRF2607ZTRL | 42 A, 75 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRF2607ZTRR | 42 A, 75 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF2607ZTRL | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET? Power MOSFET |
| AUIRF2607ZTRR | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET? Power MOSFET |
| AUIRF2804 | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF2804L | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF2804L | 制造商:International Rectifier 功能描述:MOSFET N CH 40V 195A TO-262 制造商:International Rectifier 功能描述:MOSFET, N CH, 40V, 195A, TO-262 制造商:International Rectifier 功能描述:MOSFET, N CH, 40V, 195A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating ;RoHS Compliant: Yes |
发布紧急采购，3分钟左右您将得到回复。