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参数资料
| 型号： | AUIRF7665S2TR |
| 元件分类： | JFETs |
| 英文描述： | 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 |
| 文件页数： | 4/11页 |
| 文件大小： | 326K |
| 代理商： | AUIRF7665S2TR |
AUIRF7665S2TR/TR1
2
www.irf.com
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through are on page 11
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.10
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
51
62
m
VGS(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
VGS(th)/TJ
Gate Threshold Voltage Coefficient
–––
-13
–––
mV/°C
gfs
Forward Transconductance
8.8
–––
S
RG(int)
Internal Gate Resistance
–––
3.5
5.0
IDSS
Drain-to-Source Leakage Current
–––
5
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Qg
Total Gate Charge
–––
8.3
13
VDS = 50V
Qgs1
Pre-Vth Gate-to-Source Charge
–––
1.9
–––
VGS = 10V
Qgs2
Post-Vth Gate-to-Source Charge
–––
0.77
–––
ID = 8.9A
Qgd
Gate-to-Drain Charge
–––
3.2
–––
See Fig. 11
Qgodr
Gate Charge Overdrive
–––
2.4
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
4.0
–––
Qoss
Output Charge
–––
4.7
–––
nC
td(on)
Turn-On Delay Time
–––
3.8
–––
tr
Rise Time
–––
6.4
–––
td(off)
Turn-Off Delay Time
–––
7.1
–––
ns
tf
Fall Time
–––
3.6
–––
Ciss
Input Capacitance
–––
515
–––
Coss
Output Capacitance
–––
110
–––
Crss
Reverse Transfer Capacitance
–––
30
–––
pF
Coss
Output Capacitance
–––
530
–––
Coss
Output Capacitance
–––
70
–––
Coss eff.
Effective Output Capacitance
–––
115
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
g
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
33
–––
ns
Qrr
Reverse Recovery Charge
–––
38
–––
nC
–––
14.4
58
–––
VGS = 20V
Conditions
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 80V, = 1.0MHz
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 0V, VDS = 0V to 80V
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 8.9A i
nC
TJ = 25°C, IS = 8.9A, VGS = 0V i
TJ = 25°C, IF = 8.9A, VDD = 25V
di/dt = 100A/s
i
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 10V i
RG = 6.8
VGS = -20V
VDS = VGS, ID = 25A
VDS = 16V, VGS = 0V
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VDS = 25V, ID = 8.9A
VDD = 50V
ID = 8.9A
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