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参数资料
| 型号： | AUIRF7675M2TR1 |
| 元件分类： | JFETs |
| 英文描述： | 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 292K |
| 代理商： | AUIRF7675M2TR1 |
www.irf.com
1
8/16/10
AUIRF7675M2TR
AUIRF7675M2TR1
PD -97552
Applicable DirectFET Outline and Substrate Outline
DirectFET
Power MOSFET
AUTOMOTIVE GRADE
DirectFET
ISOMETRIC
HEXFET is a registered trademark of International Rectifier.
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 250W per Channel into 4Ω with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
M2
SB
SC
M2
M4
L4
L6
L8
V(BR)DSS
150V
RDS(on) typ.
47m
:
max.
56m
:
RG (typical)
1.2
:
Qg (typical)
21nC
DD
G
S
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
A
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
f
PD @TC = 25°C
Power Dissipation
f
PD @TA = 25°C
Power Dissipation
e
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
g
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
e
–––
60
RθJA
Junction-to-Ambient
j
12.5
–––
RθJA
Junction-to-Ambient
k
20
–––
°C/W
RθJ-Can
Junction-to-Can
fl
–––
3.3
RθJ-PCB
Junction-to-PCB Mounted
1.4
–––
Linear Derating Factor
fl
W/°C
-55 to + 175
0.3
4.4
45
90
Max.
18
13
72
150
± 20
V
See Fig.18a, 18b, 15, 16
170
59
W
2.7
270
°C
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRF7675M2TR | 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF7736M2TR1 | 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF7732S2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7732S2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7734M2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7734M2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7736M2 | 制造商:International Rectifier 功能描述: |
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