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参数资料
| 型号： | AUIRF7675M2TR1 |
| 元件分类： | JFETs |
| 英文描述： | 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 |
| 文件页数： | 6/11页 |
| 文件大小： | 292K |
| 代理商： | AUIRF7675M2TR1 |
AUIRF7675M2TR/TR1
4
www.irf.com
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical On-Resistance vs. Gate Voltage
Fig 4. Typical On-Resistance vs. Drain Current
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
≤ 60μs PULSE WIDTH
Tj = 175°C
5.0V
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
≤ 60μs PULSE WIDTH
Tj = 25°C
5.0V
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
5.0V
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
40
60
80
100
120
140
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
Ω
)
ID = 11A
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
60
ID, Drain Current (A)
40
80
120
160
200
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(
m
Ω
)
Vgs = 10V
TJ = 25°C
TJ = 125°C
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = -40°C
TJ = 25°C
TJ = 175°C
VDS = 50V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(o
n)
,D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(N
or
m
al
iz
ed
)
ID = 11A
VGS = 10V
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|---|---|
| AUIRF7675M2TR | 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
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| AUIRF7732S2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7732S2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7734M2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7734M2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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