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参数资料
| 型号： | AUIRF7675M2TR1 |
| 元件分类： | JFETs |
| 英文描述： | 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 |
| 文件页数： | 8/11页 |
| 文件大小： | 292K |
| 代理商： | AUIRF7675M2TR1 |
AUIRF7675M2TR/TR1
6
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. Maximum Safe Operating Area
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 16. Typical Avalanche Current Vs.Pulsewidth
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
E A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
2.2A
4.5A
BOTTOM 11A
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
DC
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
°C
/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τι (sec)
1.381063 0.007407
1.312033 0.039921
0.104573
2.1E-05
0.501388 0.000741
τJ
τJ
τ1
τ1
τ2
τ2
τ3
τ3
R1
R1
R2
R2
R3
R3
Ci=
τi/Ri
Ci=
τi/Ri
τC
τC
τ4
τ4
R4
R4
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.01
0.1
1
10
100
A
va
la
nc
he
C
ur
re
nt
(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤj = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
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| AUIRF7675M2TR | 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF7732S2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7732S2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7734M2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7734M2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7736M2 | 制造商:International Rectifier 功能描述: |
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