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参数资料
| 型号： | AUIRFR2405 |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 200K |
| 代理商： | AUIRFR2405 |
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AUIRFR2405
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.22mH
RG = 25Ω, IAS = 34A.
ISD ≤ 34A, di/dt ≤ 190A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Notes:
S
D
G
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.052
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
11.8
16
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
30
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
70
110
Qgs
Gate-to-Source Charge
–––
16
23
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
19
29
td(on)
Turn-On Delay Time
–––
15
–––
tr
Rise Time
–––
130
–––
td(off)
Turn-Off Delay Time
–––
55
–––
ns
tf
Fall Time
–––
78
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2430
–––
Coss
Output Capacitance
–––
470
–––
pF
Crss
Reverse Transfer Capacitance
–––
100
–––
Coss
Output Capacitance
–––
2040
–––
Coss
Output Capacitance
–––
350
–––
Coss eff.
Effective Output Capacitance
g
–––
350
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
56
h
(Body Diode)
A
ISM
Pulsed Source Current
–––
220
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
62
93
ns
Qrr
Reverse Recovery Charge
–––
170
260
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
TJ = 25°C, IF = 34A
di/dt = 100A/μs
f
TJ = 25°C, IS = 34A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 34A f
MOSFET symbol
VDD = 28V
ID = 34A
RG = 6.8
Ω
Conditions
RD = 10
Ω f
VGS = 0V
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 44V
VGS = 0V, VDS = 44V, = 1.0MHz
VGS = 0V, VDS = 1.0V, = 1.0MHz
VDS = 25V, ID = 34Af
ID = 34A
VDS = 44V
VGS = 20V
VGS = -20V
VGS = 10V f
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
m
Ω
VDS = 25V
Conditions
VDS = VGS, ID = 250μA
相关PDF资料 |
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|---|---|
| AUIRFR2405TRL | 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2405TRR | 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2905ZSTRR | 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2905Z | 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2905ZSTRL | 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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