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| 型号： | AUIRFR2905ZSTRL |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 1/13页 |
| 文件大小： | 285K |
| 代理商： | AUIRFR2905ZSTRL |
AUIRFR2905Z
HEXFET Power MOSFET
07/20/10
www.irf.com
1
PD - 96320
S
D
G
D-Pak
AUIRFR2905Z
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
GD
S
Gate
Drain
Source
S
D
G
D
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
SpecificallydesignedforAutomotiveapplications,thisHEXFET
Power MOSFET utilizes the latest processing techniques to
achieveextremelylowon-resistancepersiliconarea. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy(Thermally limited)
d
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.38
RθJA
Junction-to-Ambient (PCB mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
110
0.72
± 20
Max.
59
k
42
k
240
42
82
55
See Fig.12a, 12b, 15, 16
V(BR)DSS
55V
RDS(on) typ.
11.1m
max.
14.5m
ID (Silicon Limited)
59A k
ID (Package Limited)
42A
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFR2905ZTR | 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR3504TRL | 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR3504 | 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR3504TRR | 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR3504TR | 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFR2905ZTR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR2905ZTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR2905ZTRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR3504 | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR3504 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 56A TO-25 |
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