参数资料
型号: AUIRFR2905ZSTRL
元件分类: JFETs
英文描述: 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装: ROHS COMPLIANT, PLASTIC, DPAK-3
文件页数: 10/13页
文件大小: 285K
代理商: AUIRFR2905ZSTRL
AUIRFR2905Z
6
www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
I D
,D
ra
in
C
ur
re
nt
(A
)
LIMITED BY PACKAGE
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(o
n)
,D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(N
or
m
al
iz
ed
)
ID = 36A
VGS = 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τi (sec)
0.3962
0.00012
0.5693
0.00045
0.4129
0.0015
τ
J
τ
J
τ1
τ
1
τ2
τ
2
τ
3
τ3
R
1
R
1
R
2
R
2
R
3
R
3
τ
C
Ci
i
/Ri
Ci=
τi/Ri
相关PDF资料
PDF描述
AUIRFR2905ZTR 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3504TRL 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3504 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3504TRR 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR3504TR 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
相关代理商/技术参数
参数描述
AUIRFR2905ZTR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR2905ZTRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR2905ZTRR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR3504 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR3504 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 56A TO-25