参数资料
型号: AUIRFR2405TRL
元件分类: JFETs
英文描述: 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 9/11页
文件大小: 200K
代理商: AUIRFR2405TRL
www.irf.com
7
AUIRFR2405
Fig 14. For N-Channel HEXFET Power MOSFETs
Peak Diode Recovery dv/dt Test Circuit
+
-
+
-
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
相关PDF资料
PDF描述
AUIRFR2405TRR 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR2905ZSTRR 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR2905Z 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR2905ZSTRL 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR2905ZTR 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
相关代理商/技术参数
参数描述
AUIRFR2405TRR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR2407 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR2407 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 42A TO-25
AUIRFR2407TR 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR2407TRL 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube