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参数资料
型号： AUIRFR3710Z
元件分类： JFETs
英文描述： 42 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装： ROHS COMPLIANT, D-PAK-3
文件页数： 6/13页
文件大小： 272K
代理商： AUIRFR3710Z
AUIRFR3710Z
2
www.irf.com
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.088
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
15
18
m
VGS(th)
Gate Threshold Voltage2.0
–––
4.0
V
gfs
Forward Transconductance
39
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge–––
69
100
Qgs
Gate-to-Source Charge–––
15
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge–––
25
–––
td(on)
Turn-On Delay Time
–––14–––
tr
Rise Time
–––43–––
td(off)
Turn-Off Delay Time
–––53–––
ns
tf
Fall Time
–––42–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2930
–––
Coss
Output Capacitance
–––
290
–––
Crss
Reverse Transfer Capacitance
–––
180
–––
pF
Coss
Output Capacitance
–––
1200
–––
Coss
Output Capacitance
–––
180
–––
Coss eff.
Effective Output Capacitance
–––
430
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
56
(Body Diode)
A
ISM
Pulsed Source Current
–––
220
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
3553ns
Qrr
Reverse Recovery Charge
–––
41
62
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 80V, = 1.0MHz
VGS = 0V, VDS = 0V to 80V f
VGS = 10V
e
VDD = 50V
ID = 33A
RG = 6.8
TJ = 25°C, IS = 33A, VGS = 0V e
TJ = 25°C, IF = 33A, VDD = 50V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 33A
e
VDS = VGS, ID = 250A
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 33A
ID = 33A
VDS = 80V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
相关PDF资料
PDF描述
AUIRFR3710ZTR 42 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4104TRL 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFU4104 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
AUIRFR4104 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4104TRR 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
相关代理商/技术参数
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