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| 型号： | AUIRFR4104TRR |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | PLASTIC, DPAK-3 |
| 文件页数： | 1/14页 |
| 文件大小： | 317K |
| 代理商： | AUIRFR4104TRR |
AUIRFR4104
AUIRFU4104
HEXFET Power MOSFET
09/14/2010
www.irf.com
1
AUTOMOTIVE GRADE
Features
●
Advanced Process Technology
●
Ultra Low On-Resistance
●
175°C Operating Temperature
●
Fast Switching
●
Repetitive Avalanche Allowed up to Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive appli-
cations and a wide variety of other applications.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
40V
RDS(on) max.
5.5m
ID (Silicon Limited)
119A
ID (Package Limited)
42A
S
D
G
GD
S
Gate
Drain
Source
D-Pak
AUIRFR4104
I-Pak
AUIRFU4104
G
D
S
G
D
S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.05
RθJA
Junction-to-Ambient (PCB mount)
i
–––
40
°C/W
RθJA
Junction-to-Ambient
–––
110
310
145
See Fig.12a, 12b, 15, 16
140
0.95
± 20
Max.
119
84
480
42
-55 to + 175
300
10 lbf
yin (1.1Nym)
PD - 97452A
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFR4104TR | 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105ZTRL | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105ZTRR | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105Z | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105ZTR | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFR4105 | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4105_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Advanced Planar Technology Low On-Resistance |
| AUIRFR4105TR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4105TRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4105TRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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