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参数资料
| 型号： | AUIRFR4104 |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | PLASTIC, DPAK-3 |
| 文件页数： | 13/14页 |
| 文件大小： | 317K |
| 代理商： | AUIRFR4104 |
AUIRFR/U4104
8
www.irf.com
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) =
DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
0.1
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
tav
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
40
80
120
160
E
A
R
,A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 42A
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFR4104TRR | 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4104TR | 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105ZTRL | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105ZTRR | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105Z | 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFR4104TR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4104TRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4104TRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4105 | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4105_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Advanced Planar Technology Low On-Resistance |
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