参数资料
型号: AUIRFR4104TRL
元件分类: JFETs
英文描述: 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装: PLASTIC, DPAK-3
文件页数: 8/14页
文件大小: 317K
代理商: AUIRFR4104TRL
AUIRFR/U4104
www.irf.com
3
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
D-PAK
MSL1
I-PAK
MSL1
RoHS Compliant
Yes
ESD
Machine Model
Class M4 (425V)
AEC-Q101-002
Human Body Model
Class H1C (1750V)
AEC-Q101-001
Charged Device
Model
Class C3 (625V)
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
相关PDF资料
PDF描述
AUIRFU4104 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
AUIRFR4104 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4104TRR 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4104TR 42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR4105ZTRL 30 A, 55 V, 0.0245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
相关代理商/技术参数
参数描述
AUIRFR4104TRR 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR4105 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR4105_11 制造商:IRF 制造商全称:International Rectifier 功能描述:Advanced Planar Technology Low On-Resistance
AUIRFR4105TR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR4105TRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube