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参数资料
| 型号： | AUIRFR4620TRL |
| 元件分类： | JFETs |
| 英文描述： | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 235K |
| 代理商： | AUIRFR4620TRL |
06/10/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
AUIRFR4620
PD - 97681
VDSS
200V
RDS(on) typ.
64m:
max.
78m
:
ID
24A
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Features
●
Advanced Process Technology
●
Ultra Low On-Resistance
●
Dynamic dV/dT Rating
●
175°C Operating Temperature
●
Fast Switching
●
Repetitive Avalanche Allowed up to Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
GD
S
Gate
Drain
Source
D-Pak
AUIRFR4620
G
S
D
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited) d
mJ
IAR
Avalanche Current c
A
EAR
Repetitive Avalanche Energy c
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case j
–––
1.045
RθJA
Junction-to-Ambient (PCB Mount) i
–––
50
RθJA
Junction-to-Ambient
–––
110
Max.
24
17
100
144
54
-55 to + 175
± 20
0.96
113
See Fig. 14, 15, 22a, 22b,
°C/W
°C
300
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFR4620TRR | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4620TR | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR48ZTRL | 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR48ZTR | 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR48Z | 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFR4620TRPBF | 制造商:International Rectifier 功能描述: |
| AUIRFR4620TRR | 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR48Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR48ZTR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR48ZTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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