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参数资料
| 型号： | AUIRFR4620TRL |
| 元件分类： | JFETs |
| 英文描述： | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 235K |
| 代理商： | AUIRFR4620TRL |
AUIRFR4620
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
190
200
210
220
230
240
250
260
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(V
)
Id = 5mA
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
450
500
E
A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
2.05A
2.94A
BOTTOM 15A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
1.0
10
100
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
ne
rg
y
(μ
J)
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
5
10
15
20
25
30
I D
,
D
ra
in
C
ur
re
nt
(A
)
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFR4620TRR | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4620TR | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR48ZTRL | 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR48ZTR | 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR48Z | 42 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFR4620TRPBF | 制造商:International Rectifier 功能描述: |
| AUIRFR4620TRR | 功能描述:MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR48Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR48ZTR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR48ZTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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