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参数资料
| 型号： | AUIRFR6215TRR |
| 元件分类： | JFETs |
| 英文描述： | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 265K |
| 代理商： | AUIRFR6215TRR |
AUIRFR6215
2
www.irf.com
S
D
G
S
D
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Notes
through are on page 10
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-150
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
-0.20 –––
V/°C
–––
0.295
–––
0.58
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
3.6
–––
S
IDSS
Drain-to-Source Leakage Current
–––
-25
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
66
Qgs
Gate-to-Source Charge
–––
8.1
Qgd
Gate-to-Drain ("Miller") Charge
–––
35
td(on)
Turn-On Delay Time
–––
14
–––
tr
Rise Time
–––
36
–––
td(off)
Turn-Off Delay Time
–––
53
–––
tf
Fall Time
–––
37
–––
Between lead,
nH 6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
860
–––
Coss
Output Capacitance
–––
220
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
h
VSD
Diode Forward Voltage
–––
-1.6
V
trr
Reverse Recovery Time
–––
160
240
ns
TJ = 25°C, IF =-6.6A
Qrr
Reverse Recovery Charge
–––
1.2
1.7
C di/dt = 100A/s fh
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = -10V, ID = -6.6A f TJ = 150°C
Static Drain-to-Source On-Resistance
RDS(on)
pF
A
–––
-13
-44
VGS = -10V, See Fig 6 and 13 fh
VDD = -75V
A
nA
nC
ns
Conditions
TJ = 25°C, IS =-6.6A, VGS = 0V f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = -250A
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -6.6A f
VDS = VGS, ID = -250A
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
MOSFET symbol
showing the
VDS =-120V
Conditions
RD = 12
, See Fig. 10 fh
VGS = 0V
VDS = -25V
= 1.0MHz, See Fig.5
h
ID = -6.6A
RG = 6.8
VDS = -50V, ID = -6.6A h
ID = -6.6A
VGS = 20V
VGS = -20V
LD
LS
Internal Source Inductance
Internal Drain Inductance
–––
4.5
–––
7.5
–––
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFR6215 | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215 | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215TRR | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215TR | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215TRL | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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参数描述 |
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