参数资料
型号: AUIRFR9024NTR
元件分类: JFETs
英文描述: 11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装: ROHS COMPLIANT, PLASTIC, DPAK-3
文件页数: 12/13页
文件大小: 1080K
代理商: AUIRFR9024NTR
AUIRFR/U9024N
8
www.irf.com
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
-
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery dv/dt Test Circuit
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14 For P Channel HEXFETS
相关PDF资料
PDF描述
AUIRFR9024N 11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR9024NTRR 11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFS3004-7TRR 240 A, 40 V, 0.00125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRFS3004-7TRL 240 A, 40 V, 0.00125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRFS3004-7P 240 A, 40 V, 0.00125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
相关代理商/技术参数
参数描述
AUIRFR9024NTRL 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFR9024NTRR 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFS3004 功能描述:MOSFET 40V 340A 1.75 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFS3004-7P 功能描述:MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFS3004-7PTL 功能描述:MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube