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参数资料
| 型号： | AUIRFS3006 |
| 元件分类： | JFETs |
| 英文描述： | 195 A, 60 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 239K |
| 代理商： | AUIRFS3006 |
08/22/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
AUIRFS3006
VDSS
60V
RDS(on) typ.
2.0m:
max.
2.5m
:
ID (Silicon Limited)
270A c
ID (Package Limited)
195A
PD - 97713
GD
S
Gate
Drain
Source
D
S
G
D2Pak
AUIRFS3006
AUTOMOTIVE GRADE
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design
are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Features
●
Advanced Process Technology
●
Ultra Low On-Resistance
●
Dynamic dv/dt Rating
●
175°C Operating Temperature
●
Fast Switching
●
Repetitive Avalanche Allowed up to Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
e
mJ
IAR
Avalanche Currentd
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case kl
–––
0.4
RθJA
Junction-to-Ambient j
–––
40
°C/W
A
°C
300
375
10
Max.
270
191
1080
195
-55 to + 175
± 20
2.5
10lbf
xin (1.1Nxm)
320
See Fig. 14, 15, 22a, 22b
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3107-7TRR | 240 A, 75 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| AUIRFS3107-7TRL | 240 A, 75 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| AUIRFS3107-7P | 240 A, 75 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| AUIRFS3107TRR | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3107TRL | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFS3006-7P | 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3006-7TRL | 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3006-7TRR | 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3006TRL | 功能描述:MOSFET 60V 270A 2.5 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3006TRR | 功能描述:MOSFET 60V 270A 2.5 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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