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参数资料
| 型号： | AUIRFS3107-7P |
| 元件分类： | JFETs |
| 英文描述： | 240 A, 75 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-7 |
| 文件页数： | 1/11页 |
| 文件大小： | 369K |
| 代理商： | AUIRFS3107-7P |
08/15/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
PD - 96395
AUIRFS3107-7P
GD
S
Gate
Drain
Source
D2Pak 7 Pin
AUIRFS3107-7P
G
S
D
S
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Enhanced dV/dT and dI/dT capability
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
VDSS
75V
RDS(on) typ.
2.1mΩ
max.
2.6m
Ω
ID (Silicon Limited)
260Ac
ID (Package Limited)
240A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
kl
–––
0.40
°C/W
RθJA
Junction-to-Ambient (PCB Mount) j
–––
40
°C
370
13
-55 to + 175
± 20
2.5
300
Max.
260
c
190
1060
240
320
See Fig. 14, 15, 22a, 22b
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3107TRR | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3107TRL | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3107 | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFSL3107 | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFS3206 | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFS3107-7TRL | 功能描述:MOSFET 75V 260A 2.6 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3107-7TRR | 功能描述:MOSFET 75V 260A 2.6 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3107TRL | 功能描述:MOSFET 75V 230A 3 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3107TRR | 功能描述:MOSFET 75V 230A 3 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3206 | 功能描述:MOSFET 60V 210A 3 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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