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参数资料
| 型号： | AUIRFSL3107 |
| 元件分类： | JFETs |
| 英文描述： | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 287K |
| 代理商： | AUIRFSL3107 |
08/15/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
GD
S
Gate
Drain
Source
AUIRFS3107
AUIRFSL3107
D
S
G
D2Pak
AUIRFS3107
S
D
G
D
TO-262
AUIRFSL3107
VDSS
75V
RDS(on) typ.
2.5m:
max.
3.0m
:
ID (Silicon Limited)
230A c
ID (Package Limited)
195A
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotiveapplicationsandawidevarietyofotherapplications.
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Enhanced dV/dT and dI/dT capability
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case kl
–––
0.40
°C/W
RθJA
Junction-to-Ambient (PCB Mount) j
–––
40
A
°C
300
370
14
-55 to + 175
± 20
2.5
Max.
230
160
900
195
300
See Fig. 14, 15, 22a, 22b
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
PD - 96394
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3206 | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3206TRL | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3206TRR | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFSL3206 | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFS3207ZTRL | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFSL3206 | 功能描述:MOSFET 60V 210A 3 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFSL3207Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:Specifically designed for Automotive applications |
| AUIRFSL3307Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:Advanced Process Technology |
| AUIRFSL4010 | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 100V, 170A, 4.7 MOHM, 143 NC QG, D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 100V 180A TO262 制造商:International Rectifier 功能描述:Automotive MOSFET 10 hm, 143 nC Qg, D2Pak |
| AUIRFSL4010-306 | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 100V, 170A, 4.7 MOHM, 143 NC QG, D2PAK - Rail/Tube |
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