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参数资料
| 型号： | AUIRFSL3206 |
| 元件分类： | JFETs |
| 英文描述： | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 1/13页 |
| 文件大小： | 286K |
| 代理商： | AUIRFSL3206 |
09/06/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
AUIRFS3206
AUIRFSL3206
PD - 96401A
AUTOMOTIVE GRADE
GD
S
Gate
Drain
Source
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Enhanced dV/dT and dI/dT capability
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Features
V(BR)DSS
60V
RDS(on) typ.
2.4m:
max.
3.0m
:
ID (Silicon Limited)
210A c
ID (Package Limited)
120A
D2Pak
AUIRFS3206
TO-262
AUIRFSL3206
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
S
D
G
D
S
D
G
D
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.50
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
j
–––
40
Max.
210
150
840
120
A
°C
°C/W
2.0
170
See Fig. 14, 15, 22a, 22b,
300
5.0
-55 to + 175
± 20
300
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3207ZTRL | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3207Z | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFSL3207Z | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFS3207ZTRR | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3306 | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFSL3207Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:Specifically designed for Automotive applications |
| AUIRFSL3307Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:Advanced Process Technology |
| AUIRFSL4010 | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 100V, 170A, 4.7 MOHM, 143 NC QG, D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 100V 180A TO262 制造商:International Rectifier 功能描述:Automotive MOSFET 10 hm, 143 nC Qg, D2Pak |
| AUIRFSL4010-306 | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 100V, 170A, 4.7 MOHM, 143 NC QG, D2PAK - Rail/Tube |
| AUIRFSL4115 | 功能描述:MOSFET N CH 150V 99A TO262 制造商:infineon technologies 系列:HEXFET? 包装:管件 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:150V 电流 - 连续漏极（Id）（25°C 时）:99A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:12.1 毫欧 @ 62A，10V 不同 Id 时的 Vgs（th）（最大值）:5V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:120nC @ 10V 不同 Vds 时的输入电容（Ciss）:5270pF @ 50V 功率 - 最大值:375W 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:TO-262-3，长引线，I2Pak，TO-262AA 供应商器件封装:TO-262 标准包装:50 |
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