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参数资料
| 型号： | AUIRFSL3107 |
| 元件分类： | JFETs |
| 英文描述： | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 7/12页 |
| 文件大小： | 287K |
| 代理商： | AUIRFSL3107 |
AUIRFS/SL3107
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
50
100
150
200
250
I D
,D
ra
in
C
ur
re
nt
(A
)
LIMITED BY PACKAGE
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
70
80
90
100
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
ID = 5mA
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
E
ne
rg
y
(μ
J)
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
I D
TOP
21A
49A
BOTTOM
140A
0.1
1
10
100
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
DC
LIMITED BY PACKAGE
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| AUIRFS3206TRR | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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相关代理商/技术参数 |
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|---|---|
| AUIRFSL3206 | 功能描述:MOSFET 60V 210A 3 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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