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参数资料
| 型号： | AUIRFS3107-7P |
| 元件分类： | JFETs |
| 英文描述： | 240 A, 75 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-7 |
| 文件页数： | 9/11页 |
| 文件大小： | 369K |
| 代理商： | AUIRFS3107-7P |
AUIRFS3107-7P
www.irf.com
7
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
VGS
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 21.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
CircuitLayoutConsiderations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
-
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
InductorCurrent
D.U.T.
VDS
ID
IG
3mA
VGS
.3
μF
50K
Ω
.2
μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
Pulse Width ≤ 1 s
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
- VDD
VGS
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3107TRR | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3107TRL | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3107 | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFSL3107 | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFS3206 | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFS3107-7TRL | 功能描述:MOSFET 75V 260A 2.6 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3107-7TRR | 功能描述:MOSFET 75V 260A 2.6 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3107TRL | 功能描述:MOSFET 75V 230A 3 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3107TRR | 功能描述:MOSFET 75V 230A 3 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3206 | 功能描述:MOSFET 60V 210A 3 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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