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参数资料
| 型号： | AUIRFS3107-7P |
| 元件分类： | JFETs |
| 英文描述： | 240 A, 75 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-7 |
| 文件页数： | 4/11页 |
| 文件大小： | 369K |
| 代理商： | AUIRFS3107-7P |
AUIRFS3107-7P
2
www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 240A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.026mH
RG = 25Ω, IAS = 160A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 160A, di/dt ≤ 1420A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
S
D
G
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering echniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.083 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.1
2.6
mΩ
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
260
–––
S
RG
Internal Gate Resistance
–––
2.1
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
160
240
Qgs
Gate-to-Source Charge
–––
38
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
57
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
103
–––
td(on)
Turn-On Delay Time
–––
17
–––
tr
Rise Time
–––
80
–––
td(off)
Turn-Off Delay Time
–––
100
–––
tf
Fall Time
–––
64
–––
Ciss
Input Capacitance
–––
9200
–––
Coss
Output Capacitance
–––
850
–––
Crss
Reverse Transfer Capacitance
–––
400
–––
pF
Coss eff. (ER) Effective Output Capacitance (Energy Related)i––– 1150 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h
–––
1500
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 260
(Body Diode)
ISM
Pulsed Source Current
–––
1060
(Body Diode)
d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
52
–––
TJ = 25°C
VR = 64V,
–––
63
–––
TJ = 125°C
IF = 160A
Qrr
Reverse Recovery Charge
–––
110
–––
nC TJ = 25°C
di/dt = 100A/μs
g
–––
160
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
3.8
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
nC
ns
A
ns
Conditions
ID = 160A
VGS = 20V
ID = 160A
VGS = -20V
VDS = 38V
RG = 2.7Ω
VGS = 10V g
VDD = 49V
ID = 160A, VDS =0V, VGS = 10V
VDS = VGS, ID = 250μA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
VDS = 25V, ID = 160A
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 160A g
VGS = 0V, VDS = 0V to 60V h
TJ = 25°C, IS = 160A, VGS = 0V g
integral reverse
p-n junction diode.
MOSFET symbol
showing the
Conditions
VGS = 0V, VDS = 0V to 60V i
VGS = 10V g
VGS = 0V
VDS = 50V
= 1.0MHz
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| AUIRFS3107TRR | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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| AUIRFSL3107 | 195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
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相关代理商/技术参数 |
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