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参数资料
| 型号： | AUIRFS3306 |
| 元件分类： | JFETs |
| 英文描述： | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 237K |
| 代理商： | AUIRFS3306 |
AUIRFS3306
2
www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.04mH
RG = 25Ω, IAS = 96A, VGS =10V. Part not recommended for use
above this value.
S
D
G
ISD ≤ 75A, di/dt ≤ 1400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.3
4.2
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
230
–––
S
RG
Internal Gate Resistance
–––
0.7
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
85
120
nC
Qgs
Gate-to-Source Charge
–––
20
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
26
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
59
–––
td(on)
Turn-On Delay Time
–––
15
–––
ns
tr
Rise Time
–––
76
–––
td(off)
Turn-Off Delay Time
–––
40
–––
tf
Fall Time
–––
77
–––
Ciss
Input Capacitance
–––
4520
–––
pF
Coss
Output Capacitance
–––
500
–––
Crss
Reverse Transfer Capacitance
–––
250
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
720
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 880 –––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
––– 160
A
(Body Diode)
ISM
Pulsed Source Current
–––
620
A
(Body Diode)d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
31
–––
ns
TJ = 25°C
VR = 51V,
–––
35
–––
TJ = 125°C
IF = 75A
Qrr
Reverse Recovery Charge
–––
34
–––
nC TJ = 25°C
di/dt = 100A/μs g
–––
45
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.9
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 50V, ID = 75A
Conditions
ID = 75A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS =30V
Conditions
VGS = 10V g
VGS = 0V
VDS = 50V
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 48V i, See Fig. 11
VGS = 0V, VDS = 0V to 48V h
TJ = 25°C, IS = 75A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 75A g
VDS = VGS, ID = 150μA
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
ID = 75A
RG = 2.7Ω
VGS = 10V g
VDD = 30V
ID = 75A, VDS =0V, VGS = 10V
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3306TRL | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3306TRR | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3307Z | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3307ZTRR | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3307ZTRL | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
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| AUIRFS3306TRL | 功能描述:MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3306TRR | 功能描述:MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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