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参数资料
| 型号： | AUIRFS3306 |
| 元件分类： | JFETs |
| 英文描述： | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 7/12页 |
| 文件大小： | 237K |
| 代理商： | AUIRFS3306 |
AUIRFS3306
4
www.irf.com
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
≤ 60μs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
≤ 60μs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM
4.5V
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(Α
)
VDS = 25V
≤ 60μs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(o
n)
,D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(N
or
m
al
iz
ed
)
ID = 75A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C
,C
ap
ac
ita
nc
e
(p
F
)
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
120
140
QG Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 75A
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3306TRL | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3306TRR | 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3307Z | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3307ZTRR | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3307ZTRL | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFS3306TRL | 功能描述:MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3306TRR | 功能描述:MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3307Z | 功能描述:MOSFET 75V 120A 5.8 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3307ZTRL | 功能描述:MOSFET 75V 120A 5.8 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFS3307ZTRR | 功能描述:MOSFET 75V 120A 5.8 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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