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参数资料
| 型号： | AUIRG4PH50S |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 57 A, 1200 V, N-CHANNEL IGBT, TO-247AC |
| 封装： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 230K |
| 代理商： | AUIRG4PH50S |
AUIRG4PH50S
E
C
G
n-channel
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
Industry standard TO-247AC package
Lead-Free
Automotive Qualified *
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Benefits
VCES =1200V
VCE(on) typ. = 1.47V
@VGE = 15V, IC = 33A
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
www.irf.com
1
PD -96301
GC
E
Gate
Collector
Emitter
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
V
IC@ TC = 25°C
Continuous Collector Current
IC@ TC = 100°C
Continuous Collector Current
ICM
Pulsed Collector Current
c
ILM
Clamped Inductive Load Current
d
Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
EARV
Reverse Voltage Avalanche Energy
e
mJ
PD @ TC =25°
Maximum Power Dissipation
PD @ TC =100°
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
——
0.64
RθCS
Case-to-Sink, Flat, Greased Surface
—
0.24
—
RθJA
Junction-to-Ambient, typical socket mount
——
40
Wt
Weight
—
6.0(0.21)
—
g (oz)
°C
A
V
W
°C/W
VGE
1200
57
33
114
270
-55 to + 150
± 20
± 30
200
80
TO-247AC
E
C
G
C
04/13/10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRG4PH50S | 制造商:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSIS |
| AUIRG4PH50S-205 | 制造商:International Rectifier 功能描述:AUTOMOTIVE, 1200V 74.000A AUTO TO-247, LEADFORM 205 - Rail/Tube |
| AUIRG7CH80K6B-M | 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE GRADE |
| AUIRGB4062D1 | 功能描述:IGBT 晶体管 Automotive 600V Ultra TO-220 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| AUIRGC4062B | 制造商:International Rectifier 功能描述:AUTOMOTIVE 600V 24A TRENCH IGBT DIE - Boxed Product (Development Kits) |
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