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参数资料
| 型号： | AUIRG4PH50S |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 57 A, 1200 V, N-CHANNEL IGBT, TO-247AC |
| 封装： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 230K |
| 代理商： | AUIRG4PH50S |
AUIRG4PH50S
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
—
167
251
IC = 33A
Qge
Gate - Emitter Charge (turn-on)
—
25
38
nC
VCC = 400V
See Fig. 8
Qgc
Gate - Collector Charge (turn-on)
—
55
83
VGE = 15V
td(on)
Turn-On Delay Time
—
32
—
tr
Rise Time
—
29
—
TJ = 25°C
td(off)
Turn-Off Delay Time
—
845 1268
IC = 33A, VCC = 960V
tf
Fall Time
—
425
638
VGE = 15V, RG = 5.0
Eon
Turn-On Switching Loss
—
1.80
—
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
—
19.6
—
mJ
See Fig. 9, 10, 14
Ets
Total Switching Loss
—
21.4
44
td(on)
Turn-On Delay Time
—
32
—
TJ = 150°C,
tr
Rise Time
—
30
—
IC = 33A, VCC = 960V
td(off)
Turn-Off Delay Time
—
1170
—
VGE = 15V, RG = 5.0
tf
Fall Time
—
1000
—
Energy losses include "tail"
Ets
Total Switching Loss
—
37
—
mJ
See Fig. 10,11,14
LE
Internal Emitter Inductance
—
13
—
nH
Measured 5mm from package
Cies
Input Capacitance
—
3600
—
VGE = 0V
Coes
Output Capacitance
—
160
—
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
—
30
—
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
—
V
VGE = 0V, IC = 250A
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
18
—
V
VGE = 0V, IC = 1.0 A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
—
1.22
—
V/°C VGE = 0V, IC = 2.0 mA
—
1.47
1.7
IC = 33A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
—
1.75
—
IC = 57A
See Fig.2, 5
—
1.55
—
IC = 33A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250A
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage
—
-11
—
mV/°C VCE = VGE, IC = 250A
gfe
Forward Transconductance
27
40
—
S
VCE = 100V, IC = 33A
—
250
VGE = 0V, VCE = 1200V
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
1000
VGE = 0V, VCE = 1200V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
±100
nA
VGE = ±20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES
Zero Gate Voltage Collector Current
V
A
Static or Switching Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ns
Pulse width ≤ 80s; duty factor ≤ 0.1%.
Pulse width 5.0s, single shot.
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
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