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参数资料
型号： AUIRGR4045DTRR
元件分类： IGBT 晶体管
英文描述： 12 A, 600 V, N-CHANNEL IGBT, TO-252AA
封装： ROHS COMPLIANT, PLASTIC, DPAK-3
文件页数： 8/15页
文件大小： 453K
代理商： AUIRGR4045DTRR
AUIRGR/U4045D
2
www.irf.com
Notes:
VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
V
VGE = 0V, Ic =100 A f
V(BR)CES/TJ
Temperature Coeff. of Breakdown Voltage
—0.36—
V/°C VGE = 0V, Ic = 250A ( 25 -175
oC ) f
—1.7
2.0
IC = 6.0A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.07
—
V
IC = 6.0A, VGE = 15V, TJ = 150°C
5,6,7,9,
—2.14—
IC = 6.0A, VGE = 15V, TJ = 175°C
10 ,11
VGE(th)
Gate Threshold Voltage
3.5
—
6.5
V
VCE = VGE, IC = 150A
VGE(th)/TJ
Threshold Voltage temp. coefficient
—
-13
—mV/°C VCE = VGE, IC = 250A ( 25 -175
oC )
gfe
Forward Transconductance
—
5.8
—
S
VCE = 25V, IC = 6.0A, PW =80
s
ICES
——
25
A
VGE = 0V,VCE = 600V
——
250
VGE = 0V, VCE = 600V, TJ =175°C
8
VFM
—1.60
2.30
V
IF = 6.0A
—1.30—
IF = 6.0A, TJ = 175°C
IGES
Gate-to-Emitter Leakage Current
—
±100
nA
VGE = ± 20 V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Ref.Fig
Qg
Total Gate Charge (turn-on)
—
13
19.5
IC = 6.0A
24
Qge
Gate-to-Emitter Charge (turn-on)
—
3.1
4.65
nC VCC = 400V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
—
6.4
9.6
VGE = 15V
Eon
Turn-On Switching Loss
—
56
86
IC = 6.0A, VCC = 400V, VGE = 15V
Eoff
Turn-Off Switching Loss
—
122
143
J
RG = 47
, L=1mH, LS= 150nH, TJ = 25°C
CT4
Etotal
Total Switching Loss
—
178
229
Energy losses include tail and diode reverse recovery
td(on)
Turn-On delay time
—
27
35
IC = 6.0A, VCC = 400V
tr
Rise time
—
11
15
ns
RG = 47
, L=1mH, LS= 150nH
CT4
td(off)
Turn-Off delay time
—
75
93
TJ = 25°C
tf
Fall time
—
17
22
Eon
Turn-On Switching Loss
—
140
—
IC = 6.0A, VCC = 400V, VGE = 15V
13,15
Eoff
Turn-Off Switching Loss
—
189
—
J
RG = 47
, L=1mH, LS= 150nH, TJ = 175°C
CT4
Etotal
Total Switching Loss
—
329
—
Energy losses include tail and diode reverse recovery
WF1,WF2
td(on)
Turn-On delay time
—
26
—
IC = 6.0A, VCC = 400V
14,16
tr
Rise time
—
12
—ns
RG = 47
, L=1mH, LS= 150nH
CT4
td(off)
Turn-Off delay time
—
95
—
TJ = 175°C
WF1,WF2
tf
Fall time
—
32
—
Cies
Input Capacitance
—
350
—
VGE = 0V
23
Coes
Output Capacitance
—
29
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
10
—
f = 1Mhz
TJ = 175°C, IC = 24A
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 500V, Vp =600V
CT2
RG = 100
, VGE = +20V to 0V
VCC = 400V, Vp =600V
22
RG = 100
, VGE = +15V to 0V
CT3, WF4
Erec
Reverse recovery energy of the diode
—
178
—
J
TJ = 175
oC
17,18,19
trr
Diode Reverse recovery time
—
74
—
ns
VCC = 400V, IF = 6.0A
20,21
Irr
Peak Reverse Recovery Current
—
12
—
A
VGE = 15V, Rg = 47
, L=1mH, LS=150nH
WF3
s
pF
CT6
9,10,11,12
Conditions
—
Diode Forward Voltage Drop
Collector-to-Emitter Leakage Current
SCSOA
Short Circuit Safe Operating Area
5
—
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