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参数资料
| 型号： | AUIRLR2905TRL |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 269K |
| 代理商： | AUIRLR2905TRL |
AUIRLR2905
2
www.irf.com
S
D
G
VDD = 25V, starting TJ = 25°C, L =470H
RG = 25
, IAS = 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300s; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at Tj approximately 90°C.
ISD ≤ 25A, di/dt ≤ 270A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage55
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.070
–––
V/°C
–––
0.027
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.030
–––
0.040
VGS(th)
Gate Threshold Voltage1.0
–––
2.0
V
gfs
Forward Transconductance
21
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
48
Qgs
Gate-to-Source Charge
–––
8.6
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
25
td(on)
Turn-On Delay Time
–––
11
–––
tr
Rise Time
–––
84
–––
td(off)
Turn-Off Delay Time
–––
26
–––
ns
tf
Fall Time
–––
15
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
1700
–––
Coss
Output Capacitance
–––
400
–––
Crss
Reverse Transfer Capacitance
–––
150
–––
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
42
(Body Diode)
A
ISM
Pulsed Source Current
–––
160
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
80
120
ns
Qrr
Reverse Recovery Charge
–––
210
320
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 5.0V, ID = 25A f
VGS = 4.0V, ID = 21A f
VDS = 25V, ID = 25A
ID = 25A
VGS = 16V
VGS = -16V
Conditions
VDS = 44V
Conditions
VGS = 5.0V, RD = 1.1
f
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig. 5
VGS = 5.0V f
VDD = 28V
ID = 25A
RG = 3.4
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V f
TJ = 25°C, IF = 25A
di/dt = 100A/s
f
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A f
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
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相关代理商/技术参数 |
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| AUIRLR2905TRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 27mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR2905Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR2905ZTR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR2905ZTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRLR2905ZTRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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