参数资料
型号: AUIRS2112STR
厂商: International Rectifier
文件页数: 6/23页
文件大小: 0K
描述: IC DRIVER HIGH/LOW SIDE 16SOIC
标准包装: 1,000
配置: 高端和低端,独立
输入类型: 非反相
延迟时间: 140ns
电流 - 峰: 290mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 3 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC
包装: 带卷 (TR)
AUIRS2112S
Dynamic Electrical Characteristics
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤
125°C with bias conditions of V BIAS (V CC , V BS, V DD ) = 15 V, C L = 1000 pF. The dynamic electrical characteristics are
measured using the test circuit shown in Fig. 3.
Symbol
t on
t off
t sd
t r
t f
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
Turn-off fall time
Delay matching , HS & LS turn-on/off
Min
Typ
140
140
140
60
30
Max
230
210
220
140
60
50
Units
ns
Test Conditions
V S = 0 V
V S = 600 V
Static Electrical Characteristics
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤
125°C with bias conditions of V BIAS (V CC , V BS, V DD ) = 15 V, C L = 1000 pF, V SS = COM. The V IL, V IH and I IN parameters
are referenced to V SS and are applicable to all three logic input leads: HIN, LIN and SD. The V O, and I O parameters
are reference d to COM and are applicable to the respective outp ut leads: HO or LO.
I O+( )
Symbol
V IH
V IL
V OH
V OL
I LK
I QBS
I QCC
I QDD
I IN+
I IN-
V BSUV+
V BSUV-
V CCUV+
V CCUV-
?
Definition
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
Quiescent V CC supply current
Quiescent V DD supply current
Logic “1” input bias current
Logic “0” input bias current
V BS supply undervoltage positive going
threshold
V BS supply undervoltage negative going
threshold
V CC supply undervoltage positive going
threshold
V CC supply undervoltage negative going
threshold
Output high short circuit pulsed current
Min
9.5
7.4
7.0
7.6
7.2
200
Typ
0.05
0.02
50
80
2.0
15
8.5
8.1
8.6
8.2
290
Max
6.0
0.2
0.1
50
100
160
10
30
1.0
9.6
9.2
9.6
9.2
Units
V
μA
V
Test Conditions
I O = 2 mA
V B = V S = 600 V
V IN = 0 V or V DD
V IN = V DD
V IN = 0 V
V O = 0 V,
V IN = V DD
PW ≤ 10 us,
I O-(
?)
Output low short circuit pulsed current
420
600
mA
T J = 25°C
V O = 15 V,
V IN = 0 V
PW ≤ 10 us,
T J = 25°C
(?) Guaranteed by design
www.irf.com
6
? 2008 International Rectifier
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