参数资料
型号: B120-E3/5AT
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 79K
描述: DIODE SCHOTTKY 20V 1A SMA
标准包装: 7,500
二极管类型: 肖特基
电压 - (Vr)(最大): 20V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 520mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 20V
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 带卷 (TR)
‘? > B120 thru B1607 Www'V'Shay'C°m Vishay General Semiconductor
10
B150 and E160
Average Power Loss (W)
instantaneous Forward Current (A)
E150 and E160
Number of Cycles at 50 Hz Percent of Rated Peak Reverse Voltage (%)
0.01
0 0.2 0.4 06 DE 10 1.2 0 0.2 0.4 DE DE 10 1.2 1.4
Average Forward Currem (A) instantaneous FOnNard Voltage (V)Fig. 3 - FonNard Power Loss Characteristics Fig. 6 - Typical Instantaneous Forward Characteristics
100 000 44474447 4447
B120 thru B140
. _ B150 and E160
(HA)
3
DDo
1000
100
10
Peak Forward Surge Current (A)
instantaneous Reverse Current
Fig. 4 - Typical Instantaneous FonNard Characteristics Fig. 7 - Typical Reverse Leakage Characteristics
1000
instantaneous Forward Current (A)‘Junction Capacitance (pF)
3o
B120 thru B140
---- E150andE160
0 0 2 0 4 0 6 0 E 1 0 1 2 1 4 10
Instantaneous Fonlvard Voltage MReverse Voltage (V)
Fig. 5 - Typical Instantaneous Fonlvard Characteristics
Fig. 8 - Typical Junction Capacitance
Revision: 27-Mar-12 3 Document Number: 88946
For technical questions within your region: Diode§Americas@vishay.com, DiodesAsia@vishay.com, DigdesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.visha . m/d c7910 0
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