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参数资料
| 型号： | B123ES |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW |
| 中文描述： | 进步党500个，50 V电阻毫安装备晶体管R1 \u003d 2.2千瓦，R2的\u003d 2.2千瓦 |
| 文件页数： | 1/10页 |
| 文件大小： | 73K |
| 代理商： | B123ES |
1.
Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
[1]
Also available in SOT54A and SOT54 variant packages (see
Section 2
).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTB123E series
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 k
, R2 = 2.2 k
Rev. 01 — 27 April 2005
Product data sheet
Table 1:
Type number
Product overview
Package
Philips
SOT346
SOT54
SOT23
NPN complement
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
PDTB123EK
PDTB123ES
[1]
PDTB123ET
PDTD123EK
PDTD123ES
PDTD123ET
I
Built-in bias resistors
I
Simplifies circuit design
I
500 mA output current capability
I
Reduces component count
I
Reduces pick and place costs
I
±
10 % resistor ratio tolerance
I
Digital application in automotive and
industrial segments
I
Controlling IC inputs
I
Cost-saving alternative for BC807 series
in digital applications
I
Switching loads
Table 2:
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
1.54
0.9
Typ
-
-
2.2
1.0
Max
50
500
2.86
1.1
Unit
V
mA
k
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