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参数资料
| 型号： | B123ES |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW |
| 中文描述： | 进步党500个，50 V电阻毫安装备晶体管R1 \u003d 2.2千瓦，R2的\u003d 2.2千瓦 |
| 文件页数： | 4/10页 |
| 文件大小： | 73K |
| 代理商： | B123ES |
9397 750 14904
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
4 of 10
Philips Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 k
, R2 = 2.2 k
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
SOT346
SOT54
SOT23
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
-
-
-
-
-
500
250
500
K/W
K/W
K/W
Table 8:
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-basecut-off
current
Characteristics
Conditions
V
CB
=
40 V; I
E
= 0 A
V
CB
=
50 V; I
E
= 0 A
V
CE
=
50 V; I
B
= 0 A
Min
-
-
-
Typ
-
-
-
Max
100
100
0.5
Unit
nA
nA
μ
A
I
CEO
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input
voltage
on-state input
voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
CB
=
10 V;I
E
= i
e
= 0 A;
f = 100 MHz
I
EBO
V
EB
=
5 V; I
C
= 0 A
-
-
2.0
mA
h
FE
V
CEsat
V
CE
=
5 V; I
C
=
50 mA
I
C
=
50 mA;
I
B
=
2.5 mA
V
CE
=
5 V; I
C
=
100
μ
A
40
-
-
-
-
0.3
mV
V
I(off)
0.6
1.1
1.8
V
V
I(on)
V
CE
=
0.3 V;
I
C
=
20 mA
1.0
1.5
2.0
V
R1
R2/R1
C
c
1.54
0.9
-
2.2
1.0
11
2.86
1.1
-
k
pF
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