参数资料
型号: B350A-E3/61T
厂商: Vishay General Semiconductor
文件页数: 1/3页
文件大小: 321K
描述: DIODE SCHOTTKY 50V 3A SMA
标准包装: 1,800
二极管类型: 肖特基
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 720mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 50V
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 带卷 (TR)
‘lllvVISHM ___E_____________________________EE§9?1EE§9?7 Www'V'Shay'C°m Vishay General SemiconductorSurface Mount Schottky Barrier Rectifier
FEATURES
0 Low profile package ?
0 Ideal for automated placement
0 Low fonNard voltage drop, low power losses @
y - High efficiency ROHS
\ 0 High surge capability °°MPL"‘NT
O Meets MSL level 1, per J—STD?020, LF maximum peak of260 °C
Do_214Ac (SMA) 0 Material categorization: For definitions of complianceplease see www.vishay.com/doc?99912
WPICAL APPLICATIONS
For use in low voltage, high frequency inverters,freewheeling, DC/DC converters, and polarity protectionPRIMARY cHARAcTERIsTIcs app|iCa‘ionS_
MEcHANIcAL DATAT2 case: Do-214Ac (SMA)Molding compound meets UL 94 V-0 flammability ratingBase P/N-E3 - RoHS?compliant, commercial grade
Terminals: Matte tin plated leads, solderable perJ-STD?002 and JESD 22-B102E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATIRGs (TA = 25 Dc unless otherwise noted)
PARAMETER
VF at lF:3.0A
Device marking code
Maximum repetitive peak reverse voltage
Maximum average fonivard rectified current (fig. 1)
Peak fonivard surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
-55tO+150
Revision: 27-Mar-12 1 Document Number: 89071
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.§gm/d9c?910!!0
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