参数资料
型号: B350A-E3/61T
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 321K
描述: DIODE SCHOTTKY 50V 3A SMA
标准包装: 1,800
二极管类型: 肖特基
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 720mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 200µA @ 50V
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 带卷 (TR)
‘lllvVISHM _________________________________EE§9?1EE§9?7 www'V'Shay'C°m Vishay General Semiconductor
ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 °C unless otherwise noted)
PARAMETER
Nomous wtom/ard voltage TA : 125 °C
Maximum instantaneous
TA:125°C
Typical junction capacitance 4.0 V, 1 MHZ
Notes
(1) Pulse test: 300 us pulse width, 1 % duty cycle
(2) Pulse test: Pulse width g 40 ms
Maximum reverse Current Rated VR
PARAMETERIRATINGS AND cHARAcTERIsTIcs cuRvEs
Typical thermal resistance
Note
(i) P.C.B. mounted with 0.32" x 0.32" (8 mm x 8 mm) copper pad areas. TL measured at lead terminal mount.
I 13" diameter plastic tape and reel
(TA : 25 °C unless otherwise noted)
3.0
I've or Inductive
g 2.5 A
E E
93 In
S 2.0 3
O 4
E 5
in 1.5 3
3 O
e I;od) 1.0 tom ._a>) ROB. Mounted on <(
E B
E S
< 0.5 032"xo32"la rnrnxamml
Copper Fad Areas
0
50 90 100 110 120 130 140 150 0 0.5 1.0 1.5 2.0 30 35
Lead Temperature (°C) Average Forward Current (A)Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
Revision: 27-Mar-12 2 Document Number: 89071
For technical questions witl-lin your region: DiodesAmericas@vishay.Com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.c9m/doc?91000
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