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参数资料
| 型号： | BA08CC0WT-TR |
| 元件分类： | 固定正电压单路输出LDO稳压器 |
| 英文描述： | 8 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, SFM5 |
| 封装： | LEAD FREE, TO-220FP, 5 PIN |
| 文件页数： | 7/9页 |
| 文件大小： | 1047K |
| 代理商： | BA08CC0WT-TR |
7/8
●
Other Points of Caution
1)Protection Circuits
Over-current Protection Circuit
A built-in over-current protection circuit corresponding to the current capacity prevents the destruction of the IC when there
are load shorts. This protection circuit is a “7”-shaped current control circuit that is designed such that the current is restricted
and does not latch even when a large current momentarily flows through the system with a high-capacitance capacitor.
However, while this protection circuit is effective for the prevention of destruction due to unexpected accidents, it is not
suitable for continuous operation or transient use. Please be aware when creating thermal designs that the overcurrent
protection circuit has negative current capacity characteristics with regard to temperature (Refer to Figs.4 and 16).
Thermal Shutdown Circuit (Thermal Protection)
This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage. As shown
above, this must be used within the range of acceptable loss, but if the acceptable loss happens to be continuously exceeded,
the chip temperature Tj increases, causing the temperature protection circuit to operate.
When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation
immediately after the chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to Figs.12
and 24 for the temperatures at which the temperature protection circuit operates).
There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to avoid
leaving the IC in the overloaded state.
Reverse Current
In order to prevent the destruction of the IC when a reverse current flows through the IC, it is recommended that a diode
be placed between the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.35).
2) This IC is bipolar IC that has a P-board (substrate) and P+ isolation layer
between each devise, as shown in Fig.36. A P-N junction is formed between
this P-layer and the N-layer of each device, and the P-N junction operates as a
parasitic diode when the electric potential relationship is GND> Terminal A,
GND> Terminal B, while it operates as a parasitic transistor when the electric
potential relationship is Terminal B GND> Terminal A. Parasitic devices are
structurally inevitable in the IC. The operation of parasitic devices induces
mutual interference between circuits, causing malfunctions and eventually the
destruction of the IC. It is necessary to be careful not to use the IC in ways that
would cause parasitic elements to operate. For example, applying a voltage
that is lower than the GND (P-board) to the input terminal.
Fig. 37: Example of the basic structure of a bipolar IC
●Part Number Selection
GND
N
P
N
P+
Parasitic element
or transistor
(Pin B)
B
E
Transistor (NPN)
N
P
N
GND
O
(Pin A)
GND
N
P+
Resistor
Parasitic element
P
N
P
P+
N
(Pin A)
Parasitic element
or transistor
(Pin B)
GND
C
B
E
Parasitic element
GND
Fig. 36:Bypass diode
OUT
Vcc
CTL
GND
Reverse current
ROHM
model name
Output
voltage
Current capacity
CC0 : 1A
DD0 : 2A
Shutdown switch
W : With switch
None : Without
switch
T :
F P :
HFP :
B
３ ３ D D
W
H
0
A
P
E 2
F
Package specification
TR : Embossed taping(HRP5)
E2 : Embossed taping(TO252-3,5)
None : Tube container
V5 :Foaming(V5 only)
Package
TO220-3,5
TO252-3,5
HRP5
（Unit:mm）
TO252-3
（Unit:mm）
TO252-5
（Unit:mm）
HRP5
相关PDF资料 |
PDF描述 |
|---|---|
| BA18BC0FP | 1.8 V FIXED POSITIVE LDO REGULATOR, PSSO2 |
| BA00BC0WFP | 1.5 V-12 V ADJUSTABLE POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PSSO4 |
| BA00BC0WT | 1.5 V-12 V ADJUSTABLE POSITIVE LDO REGULATOR, 0.5 V DROPOUT, SFM5 |
| BA18BC0WFP | 1.8 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PSSO4 |
| BA18BC0WT-V5 | 1.8 V FIXED POSITIVE LDO REGULATOR, ZFM5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BA08CC0WT-V5 | 功能描述:低压差稳压器 - LDO LDO REG 8V 1A 5PIN RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| BA08FP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:VOLT REGULATOR|FIXED|+8V|BIPOLAR|SIP|3PIN|PLASTIC |
| BA08FP-E2 | 功能描述:低压差稳压器 - LDO REGULATOR 8V 1A RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| BA08SFP | 制造商:ROHM 制造商全称:Rohm 功能描述:Regulator, low drop-out type with ON/OFF switch |
| BA08SFP-E2 | 功能描述:低压差稳压器 - LDO REG 8V 1A RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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