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参数资料
| 型号： | BAP51L |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Silicon PIN diode |
| 中文描述： | 60 V, SILICON, PIN DIODE |
| 封装： | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SMD, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 49K |
| 代理商： | BAP51L |
9397 750 14554
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
2 of 8
Philips Semiconductors
BAP51L
Silicon PIN diode
4.
Marking
5.
Limiting values
6.
Thermal characteristics
7.
Characteristics
Table 3:
Marking
Type number
Marking code
BAP51L
E2
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
60
V
IF
forward current
-
100
mA
Ptot
total power dissipation
Tsp =90 °C
-
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction
to solder point
100
K/W
Table 6:
Electrical characteristics
Tj = 25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 50 mA
-
0.95
1.1
V
IR
reverse current
VR = 50 V
-
100
nA
Cd
diode capacitance
f = 1 MHz; see Figure 2
VR = 0 V
-
0.30
-
pF
VR = 1 V
-
0.23
0.4
pF
VR = 5 V
-
0.17
0.3
pF
rD
diode forward resistance
f = 100 MHz; see Figure 1
IF = 0.5 mA
-
5.3
9
IF = 1 mA
-
3.5
6.5
IF = 10 mA
-
1.4
2.5
IF = 100 mA
-
0.9
1.5
s212
isolation
f = 900 MHz
-
19
-
dB
f = 1800 MHz
-
15
-
dB
f = 2450 MHz
-
13
-
dB
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