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参数资料
| 型号： | BAP51L |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Silicon PIN diode |
| 中文描述： | 60 V, SILICON, PIN DIODE |
| 封装： | 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SMD, 2 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 49K |
| 代理商： | BAP51L |
9397 750 14554
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
3 of 8
Philips Semiconductors
BAP51L
Silicon PIN diode
s
21
2
insertion loss
f = 900 MHz
-
0.4
-
dB
f = 1800 MHz
-
0.39
-
dB
f = 2450 MHz
-
0.4
-
dB
s212
insertion loss
f = 900 MHz
-
0.26
-
dB
f = 1800 MHz
-
0.26
-
dB
f = 2450 MHz
-
0.27
-
dB
s212
insertion loss
f = 900 MHz
-
0.11
-
dB
f = 1800 MHz
-
0.11
-
dB
f = 2450 MHz
-
0.12
-
dB
s212
insertion loss
f = 900 MHz
-
0.07
-
dB
f = 1800 MHz
-
0.07
-
dB
f = 2450 MHz
-
0.09
-
dB
τL
charge carrier life time
when switched from
IF =10mAtoIR = 6 mA;
RL = 100 ;
measured at IR =3mA
-
0.55
-
s
LS
series inductance
IF = 100 mA; f = 100 MHz
-
0.6
-
nH
Table 6:
Electrical characteristics …continued
Tj = 25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
f = 100 MHz; Tj =25 °C
f = 1 MHz; Tj =25 °C
Fig 1.
Forward resistance as a function of forward
current; typical values
Fig 2.
Diode capacitance as a function of reverse
voltage; typical values
IF (mA)
101
102
10
1
001aac397
10
1
102
rD
(
)
101
VR (V)
020
15
510
001aac396
200
100
300
400
Cd
(fF)
0
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